ICP etching equipment for compound semiconductor processes
ICP etching equipment for compound semiconductor processes
The RIE-330iPC is a multi-wafer processing etching device for compound semiconductor processes that employs an inductively coupled plasma (ICP) discharge method. 【Features】 ○ Compatible with large trays of Φ330mm Up to 27 pieces for Φ2-inch wafers, 17 pieces for Φ2.5-inch wafers, 12 pieces for Φ3-inch wafers, 7 pieces for Φ4-inch wafers, and 3 pieces for Φ6-inch wafers can be processed simultaneously. ○ By adopting the new SSTC (Symmetrical Shielded Tornado Coil) electrode as the ICP source, it enables high selectivity and excellent uniformity in etching over large areas. ○ Allows for low-damage processes at low bias (below -100V). ○ Stable etching conditions can be achieved through temperature control of the substrate stage and the inner walls of the reaction chamber. ○ A turbo molecular pump is also used in the load lock chamber, providing a more stable process.
- Company：サムコ
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